| 摘要 |
PROBLEM TO BE SOLVED: To provide an FRD (fast recovery diode) which improves the forward voltage VF characteristic, and in addition, is effective for improving the speed. SOLUTION: A super-junction structure is adopted as a terminal region from the ends of an active region. Consequently, the pressure resistance of the active region can utilize the resisting pressure design of the super-junction. Since the thickness of a drift layer can be reduced, improvement in the forward voltage VF characteristic can be performed. Moreover, since the junction region of a p-type region, in the active region end, can be earned by the second p-type region arranged at the end of the active region, increase can be also suppressed in the reverse recovery time trr. COPYRIGHT: (C)2007,JPO&INPIT
|
