| 摘要 |
PROBLEM TO BE SOLVED: To raise the reliability of a semiconductor which contains copper as the composition material of wiring or via. SOLUTION: The semiconductor device 100 comprises a semiconductor substrate (not shown in figure), a first insulating layer 102 formed thereon; the via 104 (a first metal film 108) formed on the first insulating layer 102 while containing copper as a principal constituent; a second barrier metal film 118 provided on the first insulating layer 102 so as to be contacted with the first metal film 108, while a fourth layer 118a containing Ru, Ta or Ti, a fifth layer 118b containing W, and a sixth layer 118c containing Ru, Ta or Ti are formed in this sequence; and a second metal film 120 provided on the second barrier metal film 118, so as to be contacted with the sixth layer 118c while containing copper as the principal constituent thereof. COPYRIGHT: (C)2007,JPO&INPIT
|
