| 摘要 |
PROBLEM TO BE SOLVED: To prevent adhesion of products of etching upon forming contact hole on a ferroelectric capacitor to the surface of a wafer. SOLUTION: In order to form the contact hole 4 to the upper electrode or the lower electrode (electrode 1) of the ferroelectric capacitor, a resist mask 3 having a predetermined film thickness is formed and the contact hole 4 is formed by etching, so that the opening 3b of resist mask 3 after forming the contact hole 4 becomes a tapered configuration by the expansion of the diameter thereof by etching, and the film thickness of a vertical configuration part becomes substantially zero. According to this method, the products of etching 5, produced by the over etching of the material of electrode or the like, are adhered to the side wall of the opening 3b of the resist mask 3, which becomes the tapered configuration, while the etching is continued still whereby the products of etching hardly remain when the etching is finished. COPYRIGHT: (C)2007,JPO&INPIT
|
