| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that an on-state resistance value is unstable due to dispersion of a diffusion layer forming region as a back gate region in a conventional semiconductor device. SOLUTION: A drain region is composed of n-type diffusion layers 9-14 having different impurity concentrations in a semiconductor device. The forming regions for the n-type diffusion layers 11, 14 respectively having a high impurity concentration are also formed over a wide region. The n-type diffusion layers 10, 13 are formed respectively having an impurity concentration lower than that of each n-type diffusion layer 11, 14. A p-type diffusion layer 5 is converged in the forming regions for the n-type diffusion layers 10, 13. By this structure, it is possible to stabilize the on-state resistance value of an n-channel MOS transistor 1 even when the p-type diffusion layer 5 is dispersed. COPYRIGHT: (C)2007,JPO&INPIT
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