| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory and its manufacturing method capable of attaining the microfabrication of the nonvolatile semiconductor memory, while suppressing the variation in the threshold voltage of each memory cell by reducing the source resistance. SOLUTION: A nonvolatile semiconductor memory 10 includes a semiconductor substrate, assist gates AG which can form an inversion layer in the semiconductor substrate 100 through a first insulating film 101 on the main surface of the semiconductor substrate 100, a second insulating layer 106 formed on the side surface of the assist gates AG, floating gates FG extended to the second insulating layer 106 formed on the main surface of the semiconductor substrate through a third insulating film 105, control gates CG formed on the floating gates FG through a fourth insulating film 112, impurity diffused layers SR formed in the main surface of semiconductor substrate 100 located in the opposite side to the assist gates AG for the floating gates FG, and conductive projection parts SRa projected from the surface of the impurity diffused layers SR to the upper part formed on the impurity diffused layers SR. COPYRIGHT: (C)2007,JPO&INPIT
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