| 摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus for manufacturing compound semiconductor to satisfactorily acquire uniformity within a plane of each compound semiconductor crystal, and thereby to improve mass-productivity through reduction in the number of times of exchange of susceptor, even in the case where plural times of vapor growths of compound semiconductor crystal are implemented to a compound semiconductor substrate. SOLUTION: The method for manufacturing compound semiconductor comprises the steps of supplying a raw material gas into a reaction furnace where the compound semiconductor 11 is held with a susceptor device 17 under the heated condition, and attaining vapor growth of the compound semiconductor crystal on the growth surface 11A of the compound semiconductor substrate with thermal decomposition and chemical reaction of this raw material gas. In this method for manufacturing compound semiconductor, the susceptor device 17 includes a substrate holder 20 for holding the compound semiconductor substrate, and the susceptor 21 provided to surround the compound semiconductor substrate. The growth surface 11A of the compound semiconductor substrate and a susceptor surface 21A displacing in accordance with the number of times of vapor growth are adjusted to be set in the same position with a lifting motor 23 of the susceptor device, in order to achieve vapor growth of the compound semiconductor crystal on the growth surface 11A. COPYRIGHT: (C)2007,JPO&INPIT |
