| 摘要 |
The present invention provides a semiconductor device capable of suppressing current collapse, and also of preventing dielectric breakdown voltage and gain from lowering so as to perform high-voltage operation and realize an ideal high output. On a substrate ( 101 ), there are formed a buffer layer ( 102 ) made of a first GaN-based semiconductor, a carrier traveling layer ( 103 ) made of a second GaN-based semiconductor and a carrier supplying layer ( 104 ) made of a third GaN-based semiconductor. A recess structure ( 108 ) is made by eliminating a part of a first insulation film ( 107 ) and a part of the carrier supplying layer ( 104 ). Next, a gate insulation film ( 109 ) is deposited, and then a gate electrode ( 110 ) is formed so as to fill up the recess portion ( 108 ) and cover on over an area where the first insulation film ( 107 ) remains so that its portion on the drain electrode side is longer than that on the source electrode side. Such a recess structure is employed so as to provide the high-output semiconductor device capable of performing the high-voltage operation.
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