| 摘要 |
A vertically-stacked three-dimensional nanocrystal memory device and a method for manufacturing the same is proposed. Each of the two vertically overlapping memory cells of the vertically-stacked three-dimensional nanocrystal memory device includes a thin-film transistor and nanocrystals embedded in a gate dielectric layer of the thin-film transistor. With the two vertically overlapping memory cells including, sharing and being controlled by a wordline, the bit density of the memory increases.
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