| 摘要 |
Provided is a semiconductor device and a method of manufacturing the semiconductor device. The semiconductor device includes a substrate, a titanium layer, a first titanium nitride layer, a second titanium nitride layer, and a via plug. The substrate includes an interlayer insulating layer formed thereon. The interlayer insulating layer can have a via hole. The titanium layer is formed within the via hole. The first titanium nitride layer is formed on the titanium layer through a reaction between the titanium layer and nitrogen gas. The second titanium nitride layer is formed on the first titanium nitride layer using a titanium nitride forming gas. The via plug is formed on the second titanium nitride layer, filling the via hole.
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