发明名称 Memory cell, read device for memory cell, memory assembly, and corresponding method
摘要 A memory cell includes transistors and two read ports. Each read port is configured to be connected to a read line. The memory cell is configured such that in a read operation of the memory cell an information stored in the memory cell is readable by a differential reading including an evaluation of an electric current between the two read ports.
申请公布号 US2007159894(A1) 申请公布日期 2007.07.12
申请号 US20060476383 申请日期 2006.06.27
申请人 INFINEON TECHNOLOGIES AG 发明人 HUBER PETER;MARTELLONI YANNICK;NIRSCHL THOMAS;OSTERMAYR MARTIN
分类号 G11C7/10 主分类号 G11C7/10
代理机构 代理人
主权项
地址