发明名称 |
Memory cell, read device for memory cell, memory assembly, and corresponding method |
摘要 |
A memory cell includes transistors and two read ports. Each read port is configured to be connected to a read line. The memory cell is configured such that in a read operation of the memory cell an information stored in the memory cell is readable by a differential reading including an evaluation of an electric current between the two read ports.
|
申请公布号 |
US2007159894(A1) |
申请公布日期 |
2007.07.12 |
申请号 |
US20060476383 |
申请日期 |
2006.06.27 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
HUBER PETER;MARTELLONI YANNICK;NIRSCHL THOMAS;OSTERMAYR MARTIN |
分类号 |
G11C7/10 |
主分类号 |
G11C7/10 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|