P-N JUNCTION DIODE AND METHOD OF MANUFACTURING THE SAME

摘要

Blanket implant diode which can be used for transient voltage suppression having a P+ substrate (12) implanted with an N- type dopant blanket implant (14) near a top surface of the substrate, creating a P- region (18). An oxide mask (20) is layered adjacent to and above the P- region. The oxide mask is partially etched away from a portion of the P- region, creating an etched region (22). An N- type main junction implant (24) is implanted into the etched region, creating an N+ region (26) above the P+ substrate and adjacent the P- region. And, a metal (28) is layered above the oxide mask in the etched region to form an electrode. Terminations may be attached electrically to both sides of the P-N junction. Methods of making and using the present invention and methods for transient voltage suppression are also provided.