CHARGED PARTICLE BEAM APPARATUS, SEMICONDUCTOR INSPECTION APPARATUS AND SAMPLE PROCESSING METHOD

摘要

PROBLEM TO BE SOLVED: To provide technology for accurately extracting and analyzing a defect detected by an electron beam. SOLUTION: A mark based on a deposition film is formed by irradiating an electron beam 12 onto a defect of a wafer 31 which is detected by the irradiation of the electron beam 12 while supplying deposition gas 52, a sample piece is processed by a projection ion beam 22 generated from a gas ion source 21 on the basis of the mark, and the processed sample piece is extracted. COPYRIGHT: (C)2007,JPO&INPIT