发明名称 SWITCHING CIRCUIT, AND DIODE
摘要 PROBLEM TO BE SOLVED: To provide a switching circuit which can be conducted bidirectionally by preventing the occurrence of latchup by a parasitic thyristor since there is a matter that the latchup arises in the parasitic thyristor contained in a transistor carrying a switching function in the conventional switching circuit which can perform a bidirectional conduction. SOLUTION: The switching circuit includes a MOS transistor carrying a switching function, a parasitic diode which exists in a source and a drain of the MOS transistor, and a diode connected in parallel with them. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007181084(A) 申请公布日期 2007.07.12
申请号 JP20050379474 申请日期 2005.12.28
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 ONO TAKASHI
分类号 H03K17/687;H01L21/822;H01L21/8234;H01L27/04;H01L27/06;H01L29/861;H03K19/0175 主分类号 H03K17/687
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