| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of suitably achieving further improvement of a current amplification factor of a bipolar transistor and a further reduction in leak current. SOLUTION: A forming position for a low resistance layer 21 functioning as an external base layer is set so that a distance d1 from an outer peripheral face of an emitter electrode 18 to an end Sf on the side of the emitter layer 17 of the low resistance layer 21 on a main surface Sa of a silicon substrate 11, a distance d2 from an inner peripheral face and from an outer peripheral face of an element isolation region 13 to the end Sf on the side of the emitter layer 17 of the low resistance layer 21, and a depth d3 of the low resistance layer 21 from the main surface Sa of the silicon substrate 11 in a surface layer region of an active region 14 from the bottom face Sd of the element isolation region 13 respectively become≥0.04μm. COPYRIGHT: (C)2007,JPO&INPIT
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