| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a compound semiconductor epitaxial substrate, which is capable of easily controlling the ON-state voltage of the epitaxial substrate. SOLUTION: In the method of manufacturing the compound semiconductor epitaxial substrate used for a bipolar transistor through an MOCVD method, a buffer layer 3, a sub-collector layer 4, a collector 5, a base layer 6, an emitter layer 7, and a contact layer 9 are deposited on a substrate 2, material containing As is used as group V material for the base material, and another material containing P is used as group V material for the emitter material. In the above manufacturing method; the base layer 6 has been grown, then a correlation between a stand-by time after the group V material is switched from the material containing As to the other material containing P and the ON-state voltage of the obtained bipolar transistor is checked, and a stand-by time for obtaining a prescribed ON-state voltage is set up resting on the basis of the above correlation, whereby the desired ON-state voltage can be obtained. COPYRIGHT: (C)2007,JPO&INPIT
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