| 摘要 |
PROBLEM TO BE SOLVED: To measure the characteristics (charge quantity in a film, film thickness, specific inductive capacity, surface potential change derived from surface adsorption substance and the like) of an insulating film formed on the surface of a semiconductor substrate, correctly, by non-contact. SOLUTION: A plurality of the film thickness and the charge quantity in the film of an insulating film on the semiconductor substrate are temporarily set up, respectively (S1). The theoretical surface potential characteristic is calculated concerning a total combination of a temporarily set-up value (S2). With respect to each theoretical surface potential characteristic, the difference is calculated between the average value of the surface potential in the measured surface potential characteristic beforehand measured by non-contact and the average value of the surface potential in the theoretical surface potential characteristic, and it is considered as the surface potential change derived from a surface adsorption substance (S3). With respect to each theoretical surface potential characteristic, the standard deviation is calculated on the measurement surface potential characteristic to the amendment surface potential characteristic corrected by the surface potential change to the theoretical surface potential characteristic (S4). The film thickness and the charge quantity are acquired in the film corresponding to the theoretical surface potential characteristic, where this standard deviation becomes minimum (S5). COPYRIGHT: (C)2007,JPO&INPIT
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