| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicon carbide single crystal capable of obtaining a high quality single crystal by suppressing the propagation of defects and strain present in the seed crystal. SOLUTION: By successively implementing a process for reducing the diameter of a seed crystal by sublimating and etching the side and outer edge of the seed crystal in which a large number of defects and strain are present and a process for growing a single crystal where the seed crystal with a reduced diameter is enlarged to a desired size, the propagation of defects and strain derived from the outer edge of a seed crystal can be suppressed and a high quality silicon carbide single crystal can be manufactured. COPYRIGHT: (C)2007,JPO&INPIT
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