| 摘要 |
According to a simultaneous dual model that a de Broglie wave accompanies an electron drift-moving in an electron circuit, wiring is considered as a waveguide of the average de Broglie wave and design was performed by reducing the resistance value at a bending portion of the wiring. Furthermore, by providing a micro structure having a wave suppressing function of the average de Broglie wave on the boundary between the metal electrode and the semiconductor electrode, so that the electron transmitting probability at the boundary is increased. This improves electric feature of a macro structure portion which may cause a local heating such as a bending corner of wiring contained in the electronic circuit such as an IC and an LSI or a boundary between the metal electrode and the semiconductor electrode. |
