| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a phase shift mask of a semiconductor device suitable for raising a resolution by correcting the phase of a reflected light by a mask and for embodying micropatterns in a lithography using an EUV light, and a method of manufacturing the phase shift mask. <P>SOLUTION: The phase shift mask of the semiconductor device is provided with: a substrate; multilayered thin films formed by having a trench with a predetermined depth on the substrate; and an absorber which embeds the trench in a predetermined depth. Thereby, according to this invention, since conventional substrates, multilayered thin films and absorbers can be used as they are, there are such effects that any expensive EUV exposure device is not changed, the resolution is raised by only a mask correction, and the micropatterns can be formed by raising a process margin. <P>COPYRIGHT: (C)2007,JPO&INPIT |
