| 摘要 |
PROBLEM TO BE SOLVED: To provide a fin-shaped transistor whose channel area is more increased and even small fin-shaped structure can keep a sufficient fin effect and its manufacturing method. SOLUTION: The fin-shaped transistor has a fin active area (35A), a gate insulating film (36A) which is formed in a side surfaces (35X, 35Y) and upper surface (35Z) of the fin active area (35A), and a gate electrode (37A) which is formed on the gate insulating film (36A) so as to cover all the surfaces (35X, 35Y, 35Z) of the fin active area (35A). COPYRIGHT: (C)2007,JPO&INPIT
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