| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma etching method capable of etching an organic film or an amorphous carbon film on a substrate to be treated at a high etching rate and at a high selection rate, when the organic film or the amorphous carbon film is etched by using a mask containing silicon. SOLUTION: A first high-frequency power having a relatively higher frequency from a first high-frequency power supply 89, and a second high-frequency power having a relatively lower frequency from a second high-frequency power supply 90, are applied to a lower electrode 16 for supporting a wafer in a chamber 10. A DC voltage from a variable DC power supply 50 is applied to an upper electrode 34 oppositely arranged to the lower electrode 16, and the inside of the chamber 10 is supplied with a treating gas containing no CF gas to generate plasma. The organic film or the amorphous carbon film on the substrate to be treated is plasma-etched by using the mask containing silicon. COPYRIGHT: (C)2007,JPO&INPIT
|
