Electronic device including a fin-type transistor structure and a process for forming the electronic device

摘要

An electronic device can include an insulating layer and a fin-type transistor structure. The fin-type structure can have a semiconductor fin and a gate electrode spaced apart from each other. A dielectric layer and a spacer structure can lie between the semiconductor fin and the gate electrode. The semiconductor fin can include channel region including a portion associated with a relatively higher V_T lying between a portion associated with a relatively lower V_T and the insulating layer. In one embodiment, the supply voltage is lower than the relatively higher V_T of the channel region. A process for forming the electronic device is also disclosed.