发明名称 |
ELECTRICAL DEVICE AND METHOD FOR FABRICATING THE SAME |
摘要 |
A method of fabricating self-aligned recess utilizing asymmetric poly spacer is disclosed. A semiconductor substrate having thereon a first pad layer and second pad layer is provided. A plurality of trenches is embedded in a memory array region of the semiconductor substrate. Each of the trenches includes a trench top layer that extrudes from a main surface of the semiconductor substrate. Asymmetric poly spacer is formed on one side of the extruding trench top layer and is used, after oxidized, as a mask for forming a recess in close proximity to the trenches.
|
申请公布号 |
US2007161205(A1) |
申请公布日期 |
2007.07.12 |
申请号 |
US20060556170 |
申请日期 |
2006.11.03 |
申请人 |
LIN SHIAN-JYH;CHENG CHIEN-LI;LEE PEI-ING;LEE CHUNG-YUAN |
发明人 |
LIN SHIAN-JYH;CHENG CHIEN-LI;LEE PEI-ING;LEE CHUNG-YUAN |
分类号 |
H01L21/76 |
主分类号 |
H01L21/76 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|