| 发明名称 |
Method for fabricating a thin film and metal line of semiconductor device |
| 摘要 |
A method for forming a thin film of a semiconductor device is provided. The method includes forming a TaN film on a semiconductor substrate, and converting a portion of the TaN film into a Ta film by reacting the TaN film with NO<SUB>2</SUB>. The Ta film is formed to have a thickness which is about half of the thickness of the TaN film.
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| 申请公布号 |
US2007161241(A1) |
申请公布日期 |
2007.07.12 |
| 申请号 |
US20060645533 |
申请日期 |
2006.12.27 |
| 申请人 |
DONGBU ELECTRONICS CO., LTD. |
发明人 |
LEE HAN-CHOON |
| 分类号 |
H01L21/44;H01L21/31;H01L21/469 |
主分类号 |
H01L21/44 |
| 代理机构 |
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