发明名称 |
Method of manufacturing memory device comprising gate having uniformly distributed silicon nano dots |
摘要 |
<p>Provided is a method of manufacturing a memory device which comprises a gate including uniformly distributed silicon nano dots. The method includes forming a gate on a substrate, the gate including an insulating film, sequentially stacked nano dot layers separated by a predetermined distance, and a conductive film pattern, forming a source region and a drain region contacting the gate in the substrate, and forming first and second metal layers on the source region and the drain region, respectively.
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申请公布号 |
EP1571702(A3) |
申请公布日期 |
2007.07.11 |
申请号 |
EP20050251308 |
申请日期 |
2005.03.04 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
YOO, IN-KYEONG;JEONG, SOO-HWAN;RYU, WON-IL |
分类号 |
H01L21/28;H01L27/10;H01L21/335;H01L21/8247;H01L27/115;H01L29/423;H01L29/788;H01L29/792 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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