发明名称 |
Conductive interconnect with a localized overhanging dielectric barrier |
摘要 |
The invention concerns an integrated circuit comprising at least one interconnect layer, the interconnect layer comprising a first conductive track and a first localized barrier formed over the first conductive track, the width of the first localized barrier being wider than the width of the first conductive track such that the first localized barrier overhangs the first conductive track. |
申请公布号 |
EP1806781(A1) |
申请公布日期 |
2007.07.11 |
申请号 |
EP20060100214 |
申请日期 |
2006.01.10 |
申请人 |
STMICROELECTRONICS (CROLLES 2) SAS |
发明人 |
BUSTOS, JESSY;CHHUN, SONARITH |
分类号 |
H01L21/768;H01L23/522;H01L23/532 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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