发明名称 Conductive interconnect with a localized overhanging dielectric barrier
摘要 The invention concerns an integrated circuit comprising at least one interconnect layer, the interconnect layer comprising a first conductive track and a first localized barrier formed over the first conductive track, the width of the first localized barrier being wider than the width of the first conductive track such that the first localized barrier overhangs the first conductive track.
申请公布号 EP1806781(A1) 申请公布日期 2007.07.11
申请号 EP20060100214 申请日期 2006.01.10
申请人 STMICROELECTRONICS (CROLLES 2) SAS 发明人 BUSTOS, JESSY;CHHUN, SONARITH
分类号 H01L21/768;H01L23/522;H01L23/532 主分类号 H01L21/768
代理机构 代理人
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