| 发明名称 |
METHOD FOR PRODUCING AlN SINGLE CRYSTAL AND AlN SINGLE CRYSTAL |
| 摘要 |
<p>An AlN single crystal is grown by pressurizing a melt comprising at least gallium, aluminum and sodium in an atmosphere comprising nitrogen. Preferably, the AlN single crystal is grown under a nitrogen partial pressure of 50 atms or lower and at a temperature of 850 °C or higher and 1200 °C or lower.</p> |
| 申请公布号 |
EP1806439(A1) |
申请公布日期 |
2007.07.11 |
| 申请号 |
EP20050778521 |
申请日期 |
2005.09.05 |
| 申请人 |
NGK INSULATORS, LTD. |
发明人 |
IWAI, MAKOTO;IMAI, KATSUHIRO |
| 分类号 |
C30B29/38;C30B9/10;C30B11/06;C30B19/02;C30B29/40 |
主分类号 |
C30B29/38 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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