| 发明名称 |
Method for fabricating a MESFET and a MESFET |
| 摘要 |
The method includes forming an n-type channel portion (28) in a substrate (20) and forming a p-type channel portion (34) in the substrate (20). A boundary (75) of the n-type channel portion (28) and a boundary (73) of the p-type channel portion (34) define an intrinsic region (72) in the substrate (20).
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| 申请公布号 |
EP1806779(A2) |
申请公布日期 |
2007.07.11 |
| 申请号 |
EP20070100057 |
申请日期 |
2007.01.03 |
| 申请人 |
COBHAM DEFENSE ELECTRONIC SYSTEMS CORPORATION |
发明人 |
WINSLOW, THOMAS AARON |
| 分类号 |
H01L21/338;H01L29/06;H01L29/10;H01L29/812 |
主分类号 |
H01L21/338 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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