发明名称 |
Semiconductor memory device and method for producing the same |
摘要 |
<p>A semiconductor device comprises a floating gate which is formed on a semiconductor substrate of a first conductive type interposing a first gate insulation layer therebetween, a second charge retaining area which is formed on the semiconductor substrate interposing a second insulation layer, a control gate which is formed on the floating gate interposing a second gate insulation layer therebetween, a second gate electrode which extends in the first direction and which is formed on the second charge retaining region interposing the second gate insulation layer therebetween, and a semiconductor layer which extends in a second direction and which is formed on the semiconductor substrate so as to intersect the first and the second gate electrode are provided; wherein an n-type conductive region of a second conductive type is formed on the semiconductor layer. Consequently, it achieves high-integration of a semiconductor device.</p> |
申请公布号 |
EP1806788(A2) |
申请公布日期 |
2007.07.11 |
申请号 |
EP20060026218 |
申请日期 |
2006.12.18 |
申请人 |
RENESAS TECHNOLOGY CORP. |
发明人 |
ISHIGAKI, TAKASHI;OSABE, TARO;KOBAYASHI, TAKASHI;IMAI, YUTAKA;SHIMIZU, MASAHIRO |
分类号 |
H01L29/788;H01L21/336;H01L27/115 |
主分类号 |
H01L29/788 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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