发明名称
摘要 PROBLEM TO BE SOLVED: To control resticking of debris(scatters) arises from an ultra-violence laser emit etching. SOLUTION: The device comprises the first laser oscillator 3 which irradiates a short wave ultra violence laser ML to the surface 2 of the processing object 1 to process an etching on the surface 2 and, the second laser oscillator 4 which irradiates a carbonic acid gas laser AL, wave length of which is equivalent to the length of the part the ultra violence laser ML irradiated, to partially heat the part, inclusive of the part irradiated by the laser ML. The device also comprises another controller 6 which makes an optimal control of the ultra violence laser ML as a main radiation, and the carbonic acid gas laser AL as an assist radiation on one side, and controls the position of XY table 5 so as to move the processing object 1 against the ultraviolence laser ML and the carbonic acid gas laser AL, as well.
申请公布号 JP3944615(B2) 申请公布日期 2007.07.11
申请号 JP19970137060 申请日期 1997.05.27
申请人 发明人
分类号 B23K26/00;B23K26/04;B23K26/06;B23K26/067 主分类号 B23K26/00
代理机构 代理人
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