| 摘要 |
A method for dynamically adjusting the operation of a memory chip is disclosed. First, a memory chip is provided. The memory chip comprises an ONO layer. Then, the thickness of the ONO layer in the memory chip is measured, and a read word line voltage of the memory chip is then adjusted based on the measured thickness of the ONO layer. Since the operation window of memory chip is dynamically adjusted, a more reliable product operation and a sufficient mass production window are obtained.
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