STRIPPER COMPOSITION FOR PHOTORESIST

摘要

Provided is a stripper composition for a photoresist, which allows removal of a photoresist layer, which is degenerated even by a severe lift-off type photographic etching step, in a short time while not adversely affecting an underlying conductive layer or insulation layer. The stripper composition for a photoresist comprises: (a) 3-30 wt% of a water soluble organic amine compound; (b) 65-95 wt% of a polar aprotic solvent; and (c) 0.01-5 wt% of an anti-corrosive agent. The water soluble organic amine compound is at least one compound selected from the group consisting of primary amino alcohol compounds, secondary amino alcohol compounds and tertiary amino alcohol compounds. The polar aprotic solvent has a viscosity of 1 cP or less.