| 摘要 |
A novel tungsten or molybdenum containing compound is provided to be prepared without requiring expensive lithium alkyls or amides, reduce the risk of undesirable incorporation of carbon into the substrate coating due to the introduction of a DAD ligand as a CVD-suitable leaving group for W(III) or Mo(III) layers, and be able to specifically change the layer composition in the CVD in combination with N starting materials. The compound is represented by the formula(1), wherein M is W or Mo, each R^1 and R^2 is independently unsubstituted or substituted C1-12 alkyl, unsubstituted or substituted C5-12 cycloalkyl, unsubstituted or substituted C6-10 aryl, 1-alkenyl, 2-alkenyl, 3-alkenyl, triorganosilyl -SiR3 or amino NR2(wherein R is C1-4 alkyl), each R^3 and R^4 is independently unsubstituted or substituted C1-8 alkyl radical, unsubstituted or substituted C5-10 cycloalkyl, unsubstituted or substituted C6-14 aryl, SiR3 or NR2, and each R^5 and R^6 is independently H or unsubstituted or substituted C1-12 alkyl, unsubstituted or substituted C5-12 cycloalkyl, or unsubstituted or substituted C6-12 aryl. The method for preparing the compound comprises a step of reacting a DAD(1,4-diaza-butadiene) ligand precursor of the formula(6) with an Mo or W complex of the formula(7) of [M(NR^3)(NR^4)Cl2L2] in the presence of at least one reducing agent in an appropriate solvent at a temperature of -20-120 deg.C. The method for preparing a tungsten- or molybdenum-containing layer comprises a step of performing chemical vapor deposition using the compound of the formula(1) as a precursor. |
