TFT SUBSTRATE AND MAKING METHOD OF THE SAME

摘要

A thin film transistor substrate and a manufacturing method of the same are provided to improve a lifting effect of a thin film from a plastic insulating substrate in a cleaning process of the plastic insulating substrate and a thin film patterning process. A first inorganic layer(20a) is formed on one surface of a plastic insulating substrate(10). A second inorganic layer(20b) is formed on the other surface of the plastic insulating substrate. The thickness of the first inorganic layer is larger than the thickness of the second inorganic layer. The first and second inorganic layers include at least one of silicon oxide and silicon nitride. A gate insulating layer, a resistant contact layer, and a semiconductor layer are formed on the second inorganic layer. The first inorganic layer has a thickness causing stress, of 70 to 80 percent, when forming the third layer.