发明名称 |
Processing method for protection of backside of a wafer |
摘要 |
A temporal protection layer is employed to a wafer backside for use of micro-electro-mechanical systems (MEMS). The formation of the temporal protection layer prevents the wafer backside from scratch in process of transferring system for IC manufacturers. With regard to low cost and easy forming and removing, an oxide layer is used as the temporal protection layer. The throughput and yield rate of the wafer production are improved by the use of the temporal protection layer.
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申请公布号 |
US7241693(B2) |
申请公布日期 |
2007.07.10 |
申请号 |
US20050107885 |
申请日期 |
2005.04.18 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
TSENG KUO-PANG;LEE LUNG-AN;HUANG YIN-FU;HSU CHIH-CHIA;LEE CHENG-HSIUNG |
分类号 |
H01L21/302;H01L21/311 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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