CVD DEVICE

摘要

A CVD apparatus is provided to enhance productivity and yield by forming a thin film on an entire surface of a substrate and suppressing contamination on a backside of the substrate due to a raw material gas and a secondary product gas. A CVD apparatus is used for forming a thin film including at least one of components of raw material gas on a substrate(2). The substrate is loaded on a heating holder(3) within a reduced pressure vessel. The substrate is fixed by using a ring chuck(4). A gas introduction part(5) is formed to introduce the raw material gas. A tapering part is formed at a lower part of an inner circumference of the ring chuck. The substrate is fixed on the heating holder by using the tapering part. A purge gas is discharged from a purge gas outlet formed at the tapering part to an outer circumference part of the substrate.