Maskless multiple sheet polysilicon resistor

摘要

The present invention facilitates semiconductor fabrication of semiconductor devices having polysilicon resistors. An oxide layer is formed over a semiconductor device ( 104 ). A polysilicon layer is formed on the oxide layer ( 106 ). The polysilicon layer is patterned to form a polysilicon resistor ( 108 ). A poly resistor mask having a selected percentage of the poly resistor exposed is formed on the poly resistor ( 110 ). A selected dopant is implanted ( 112 ), which modifies the resistivity of the poly resistor. The mask is removed ( 114 ) and a thermal activation process is performed ( 116 ) that diffuses the implanted dopant to a substantially uniform concentration throughout the polysilicon resistor.