发明名称 |
High dynamic range image sensor cell |
摘要 |
An image sensor cell includes a first MOS transistor coupled to an operating voltage for providing an output voltage of the image sensor cell with the output voltage changing conformingly with a voltage on a gate of the first MOS transistor. A photodiode is coupled to a floating node which further controls the voltage of the gate of the first MOS transistor. A photoconductor is coupled between the operating voltage and the floating node. The photoconductor has its resistance varying in response to a magnitude change of an imposed illumination so that the floating node is provided with additional electrical charges conformingly through the photoconductor while the photodiode drains electrical charges, thereby decreasing a voltage reduction rate of the voltage on the gate of the first MOS transistor.
|
申请公布号 |
US7242430(B2) |
申请公布日期 |
2007.07.10 |
申请号 |
US20040980639 |
申请日期 |
2004.11.03 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
YAUNG DUN-NIAN;CHIEN HO-CHING;HSU TZU-HSUAN |
分类号 |
H04N3/14;H04N5/335 |
主分类号 |
H04N3/14 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|