| 摘要 |
<p>A high voltage device and a method for fabricating the same are provided to improve a degree of integration without lowering a breakdown voltage by forming a trench isolation layer at a junction region between a gate and a contact. A semiconductor substrate(20) includes an active region defined by an isolation layer. A gate(25) is formed apart from the isolation layer on the semiconductor substrate. A junction region(26) is formed within the semiconductor substrate. A contact(28) is formed on the junction region and is connected electrically with the junction region. The contact has a predetermined distance from the gate. A trench isolation layer is formed within the junction region between the gate and the contact.</p> |
