发明名称 |
Barrier polishing fluid |
摘要 |
The polishing fluid is useful for polishing tantalum-containing barrier materials of a semiconductor substrate. The polishing fluid includes a nitrogen-containing compound having at least two nitrogen atoms comprising imine compounds and hydrazine compounds. The nitrogen-containing compound is free of electron-withdrawing substituents; and the polishing fluid is capable of removing the tantalum-containing barrier materials from a surface of the semiconductor substrate without an abrasive.
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申请公布号 |
US7241725(B2) |
申请公布日期 |
2007.07.10 |
申请号 |
US20030670587 |
申请日期 |
2003.09.25 |
申请人 |
ROHM AND HAAS ELECTRONIC MATERIALS CMP HOLDINGS, INC. |
发明人 |
BIAN JINRU |
分类号 |
B24B37/00;C11D7/50;C09G1/02;C09K3/14;H01L21/304;H01L21/321 |
主分类号 |
B24B37/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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