| 摘要 |
A method of manufacturing a polysilicon layer is provided. Firstly, a substrate is provided. Next, an amorphous silicon having a first region and a second region is formed on the substrate. After that, the amorphous silicon layer in the first region is completely melted and the amorphous silicon layer in the second region is preheated. The completely melted amorphous silicon layer in the first region is crystallized to form a first polysilicon layer. Next, the preheated amorphous silicon layer in the second region is completely melted. The completely melted amorphous silicon layer in the second region is crystallized to form a second polysilicon layer.
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