| 发明名称 |
Test masks for lithographic and etch processes |
| 摘要 |
A mask design is generated for patterning a test wafer using a lithographic or etch process, the process is characterized based on the patterned test wafer, and a pattern-dependent model is used based on the characterization to predict characteristics of integrated circuits that are to be fabricated by the lithographic or etch process.
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| 申请公布号 |
US7243316(B2) |
申请公布日期 |
2007.07.10 |
| 申请号 |
US20020321281 |
申请日期 |
2002.12.17 |
| 申请人 |
PRAESAGUS, INC. |
发明人 |
WHITE DAVID;SMITH TABER H. |
| 分类号 |
G06F17/50;G01Q30/02;G01Q60/00;G01Q80/00;G01Q90/00;G06F9/45;G06F19/00;H01L21/3105;H01L21/321 |
主分类号 |
G06F17/50 |
| 代理机构 |
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