| 摘要 |
<p>A method for forming a pattern of a semiconductor device is provided to adjust easily the CD(Critical Dimension) without the decrease of margin of a photoresist layer and to prevent the variation of profile of a hard mask by reducing a bias power in an ARC(Anti-Reflective Coating) etching process. A hard mask(23) is formed on an etch object layer. An ARC(24) is formed on the hard mask. A photoresist mask is formed on the ARC. The ARC is etched by using the photoresist mask as an etch mask. At this time, a bias power is controlled to increase the CD of an etched portion. The hard mask is selectively etched through the etched portion of the ARC. A trench pattern is formed on the resultant structure by etching the etch object layer using the hard mask as an etch mask. The ARC etching process is performed in a bias power range of 25 to 35 W by using an oxygen gas as an etch gas.</p> |
