| 摘要 |
A light emitting diode and a manufacturing method thereof are provided to enhance light emitting efficiency of the LED(Light Emitting Diode) by reducing a surface resistance of the LED. A light emitting diode includes a TFT(Thin Film Transistor) unit(42), a first light emitting unit, a second light emitting unit, and a connector(C). The TFT unit is formed on a first substrate(40). A light emitting unit is formed between two electrodes on the first substrate. One of the two electrodes is connected to a drain(42c) of the TFT unit. A second light emitting unit is formed between two electrodes on a second substrate. One of the two electrodes includes a region, where a current intensity is partially increased. The connector is formed between the first and second light emitting units. The connector electrically couples one of the electrodes of the first light emitting unit with one of the electrodes of the second light emitting unit. |
