| 摘要 |
The thin film semiconductor device of the present invention includes a gate electrode insulator, which is formed through high-heat oxidization of semiconductor film. The high-heat oxidization of semiconductor film is carried out, in the process of crystallization or recrystallization of non-single- crystalline semiconductor thin film on a base layer, by irradiating predetermined areas of the thin film which is implanted with oxygen ion before irradiation, to convert such areas to oxidized areas, and these areas are processed to gate electrode insulators of electric circuit units in the thin film semiconductor device. The device has advantages in greatly reducing the fluctuation of operational threshold value and increasing the stability of device. When irradiation of energy beam is carried out in a specified mode, the thin film semiconductor device having a high nobility, in which unit electric circuit are arranged regularly in accordance with the arrangement of semiconductor crystal grains, is obtained. <IMAGE> |
