METHOD OF MANUFACTURING A THIN FILM LAYER OF SINGLE CRYSTAL STRUCTURE

摘要

A method for forming a thin film with a single crystal structure is provided to be actively used in a semiconductor device necessitating stack-type high integration by easily forming a thin film of a single crystalline structure made of dense grains with a large size while remarkably reducing delamination from an underlying insulation layer. A seed thin film(14) of single crystalline structure is prepared. A thin film(16) of an amorphous structure is formed on the seed thin film. A first laser beam(17) is partially irradiated to a portion from the surface of the thin film of the amorphous structure to a shallower position than a contact surface between the thin film of the amorphous structure and the seed thin film so as to generate a phase change while the seed thin film is not influenced so that the thin film of the amorphous structure is transformed into a thin film of a polycrystalline structure. A second laser beam is partially irradiated to a portion from the surface of the thin film of the polycrystalline structure to a contact surface between the thin film of the polycrystalline structure and the seed thin film so as to generate a phase change while the seed thin film is not influenced so that the thin film of the polycrystalline structure is transformed into a thin film of a single crystalline structure having the same crystal structure as the seed thin film. Members for irradiating the first and second laser beams are the same.