| 摘要 |
<p>A method for fabricating a NAND-type flash memory device is provided to form a control gate consisting of a second conductive layer, a silicide layer and a noble metal layer by forming a noble metal layer on a silicide layer. A gate pattern is formed on a semiconductor substrate(100), composed of a tunnel oxide layer(102), a floating gate(104a), a dielectric layer(106), a second conductive layer(108) and a hard mask layer. The floating gate can be made of a polysilicon layer. A gap between the gate patterns is filled with an interlayer dielectric(116). The hard mask layer is removed to expose the surface of the second conductive layer. A silicide layer(120) is formed on the exposed second conductive layer. A seed layer is formed on the silicide layer. The seed layer is grown to form a noble metal layer(126) on the silicide layer. The noble metal layer can be made of the same material as that of the seed layer.</p> |
