METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A method for fabricating a semiconductor device is provided to form a planar transistor and a fin transistor for each region after an SOI(Silicon On Insulator) substrate is formed. A substrate is partially etched to form an isolation trench, and an insulation layer liner is formed on a sidewall of the isolation trench which contacts a gate electrode forming region in first and second regions. An isolation film(216) is formed to fill an interior of the isolation trench. The insulation layer liner is partially removed to expose an upper surface of the substrate in the gate electrode forming regions of the first and second regions. A gate oxide layer(230) and a gate electrode are formed on the exposed substrate.