| 摘要 |
A semiconductor memory device is provided to prevent an error, by optimizing discharge of a bit line sense amplifier after a driving voltage of the bit line sense amplifier is increased for an over driving operation. A sense amplifier(300) receives a driving voltage through a sense amplifier voltage input stage, and senses and amplifies the difference between signals applied to two input lines. A sense amplifier voltage providing part(200) provides a driving voltage and an over driving voltage higher than the driving voltage to the sense amplifier through the sense amplifier voltage input stage, using a power supply voltage. A driving voltage control part(100) increases the driving voltage applied to the voltage input stage of the sense amplifier to a power supply voltage level for over-driving, and discharges the power supply voltage to the driving voltage. The driving voltage control part detects discharge timing according to the power supply voltage level, and performs voltage drop from the over driving voltage level to the driving voltage level according to the detected discharge timing.
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