发明名称 |
RELIABILITY BARRIER INTEGRATION FOR CU APPLICATION |
摘要 |
Embodiments of the present invention provide a process sequence and related hardware for filling a patterned feature on a substrate with a metal, such as copper. The sequence comprises first forming a reliable barrier layer in the patterned feature to prevent diffusion of the metal into the dielectric layer through which the patterned feature is formed. One sequence comprises forming a generally conformal barrier layer over a patterned dielectric, etching the barrier layer at the bottom of the patterned feature, depositing a second barrier layer, and then filling the patterned feature with a metal, such as copper.
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申请公布号 |
US2007151861(A1) |
申请公布日期 |
2007.07.05 |
申请号 |
US20070682005 |
申请日期 |
2007.03.05 |
申请人 |
XI MING;SMITH PAUL F;CHEN LING;YANG MICHAEL X;CHANG MEI;CHEN FUSEN;MARCADAL CHRISTOPHE;LIN JENNY C |
发明人 |
XI MING;SMITH PAUL F.;CHEN LING;YANG MICHAEL X.;CHANG MEI;CHEN FUSEN;MARCADAL CHRISTOPHE;LIN JENNY C. |
分类号 |
C23C28/00;H01L21/285;C23C28/02;H01L21/768 |
主分类号 |
C23C28/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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